PART |
Description |
Maker |
NE55410GR-T3-AZ |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
|
Renesas Electronics Corporation
|
MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
|
LB421-14 |
RF POWER LDMOS TRANSISTOR SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
NE5550979A NE5550979A-T1 NE5550979A-T1A |
Silicon Power LDMOS FET
|
Renesas Electronics Corporation
|
LP721 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
L88016 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LK802 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LP801 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
Polyfet RF Devices
|
LP701 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|
LX723 |
SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
|
POLYFET[Polyfet RF Devices]
|